STW56N65M2-4

R 1.00

MOSFET N-channel 650 V, 0.049 Ohm typ., 49 A MDmesh M2 Power MOSFET in a TO247-4 package

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MOSFET N-channel 650 V, 0.049 Ohm typ., 49 A MDmesh M2 Power MOSFET in a TO247-4 package

Products specifications

Packaging	Tube
Rds On - Drain-Source Resistance	62 mOhms
Maximum Operating Temperature	+ 150 C
Technology	Si
Vgs th - Gate-Source Threshold Voltage	2 V
Minimum Operating Temperature	- 55 C
Id - Continuous Drain Current	49 A
Pd - Power Dissipation	358 W
Vds - Drain-Source Breakdown Voltage	650 V
Tradename	MDmesh
Qg - Gate Charge	93 nC
Channel Mode	Enhancement
Configuration	Single
Transistor Polarity	N-Channel
Mounting Style	Through Hole
Number of Channels	1 Channel
Vgs - Gate-Source Voltage	25 V

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Products specifications

Packaging	Tube
Rds On - Drain-Source Resistance	62 mOhms
Maximum Operating Temperature	+ 150 C
Technology	Si
Vgs th - Gate-Source Threshold Voltage	2 V
Minimum Operating Temperature	- 55 C
Id - Continuous Drain Current	49 A
Pd - Power Dissipation	358 W
Vds - Drain-Source Breakdown Voltage	650 V
Tradename	MDmesh
Qg - Gate Charge	93 nC
Channel Mode	Enhancement
Configuration	Single
Transistor Polarity	N-Channel
Mounting Style	Through Hole
Number of Channels	1 Channel
Vgs - Gate-Source Voltage	25 V