STW56N65M2

R 1.00

MOSFET N-channel 650 V, 0.049 Ohm typ., 49 A MDmesh M2 Power MOSFET in a TO-247 package

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MOSFET N-channel 650 V, 0.049 Ohm typ., 49 A MDmesh M2 Power MOSFET in a TO-247 package

Products specifications

Packaging	Tube
Maximum Operating Temperature	+ 150 C
Vgs th - Gate-Source Threshold Voltage	2 V
Id - Continuous Drain Current	49 A
Pd - Power Dissipation	358 W
Tradename	MDmesh
Rds On - Drain-Source Resistance	49 mOhms
Number of Channels	1 Channel
Qg - Gate Charge	93 nC
Technology	Si
Vgs - Gate-Source Voltage	25 V
Transistor Polarity	N-Channel
Mounting Style	Through Hole
Channel Mode	Enhancement
Configuration	Single
Vds - Drain-Source Breakdown Voltage	650 V

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Products specifications

Packaging	Tube
Maximum Operating Temperature	+ 150 C
Vgs th - Gate-Source Threshold Voltage	2 V
Id - Continuous Drain Current	49 A
Pd - Power Dissipation	358 W
Tradename	MDmesh
Rds On - Drain-Source Resistance	49 mOhms
Number of Channels	1 Channel
Qg - Gate Charge	93 nC
Technology	Si
Vgs - Gate-Source Voltage	25 V
Transistor Polarity	N-Channel
Mounting Style	Through Hole
Channel Mode	Enhancement
Configuration	Single
Vds - Drain-Source Breakdown Voltage	650 V