STW56N65DM2

R 1.00

MOSFET N-channel 650 V, 0.052 Ohm typ., 48 A MDmesh DM2 Power MOSFET in a TO-247 package

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MOSFET N-channel 650 V, 0.052 Ohm typ., 48 A MDmesh DM2 Power MOSFET in a TO-247 package

Products specifications

Channel Mode	Enhancement
Technology	Si
Rds On - Drain-Source Resistance	58 mOhms
Transistor Polarity	N-Channel
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Tradename	MDmesh
Number of Channels	1 Channel
Qg - Gate Charge	88 nC
Pd - Power Dissipation	360 W
Vds - Drain-Source Breakdown Voltage	650 V
Vgs th - Gate-Source Threshold Voltage	3 V
Configuration	Single
Id - Continuous Drain Current	48 A
Mounting Style	Through Hole
Vgs - Gate-Source Voltage	25 V

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Products specifications

Channel Mode	Enhancement
Technology	Si
Rds On - Drain-Source Resistance	58 mOhms
Transistor Polarity	N-Channel
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Tradename	MDmesh
Number of Channels	1 Channel
Qg - Gate Charge	88 nC
Pd - Power Dissipation	360 W
Vds - Drain-Source Breakdown Voltage	650 V
Vgs th - Gate-Source Threshold Voltage	3 V
Configuration	Single
Id - Continuous Drain Current	48 A
Mounting Style	Through Hole
Vgs - Gate-Source Voltage	25 V