STW56N60M2-4

R 1.00

MOSFET N-channel 600 V, 0.045 Ohm typ., 52 A MDmesh M2 Power MOSFET in a TO247-4 package

Availability: Out of stock

Qty:

Free shipping

MOSFET N-channel 600 V, 0.045 Ohm typ., 52 A MDmesh M2 Power MOSFET in a TO247-4 package

Products specifications

Tradename	MDmesh
Vds - Drain-Source Breakdown Voltage	600 V
Packaging	Tube
Technology	Si
Mounting Style	Through Hole
Maximum Operating Temperature	+ 150 C
Id - Continuous Drain Current	52 A
Pd - Power Dissipation	350 W
Vgs - Gate-Source Voltage	25 V
Transistor Polarity	N-Channel
Qg - Gate Charge	91 nC
Number of Channels	1 Channel
Vgs th - Gate-Source Threshold Voltage	2 V
Configuration	Single
Channel Mode	Enhancement
Rds On - Drain-Source Resistance	45 mOhms

Your name *

Your email *

Enquiry *

Products specifications

Tradename	MDmesh
Vds - Drain-Source Breakdown Voltage	600 V
Packaging	Tube
Technology	Si
Mounting Style	Through Hole
Maximum Operating Temperature	+ 150 C
Id - Continuous Drain Current	52 A
Pd - Power Dissipation	350 W
Vgs - Gate-Source Voltage	25 V
Transistor Polarity	N-Channel
Qg - Gate Charge	91 nC
Number of Channels	1 Channel
Vgs th - Gate-Source Threshold Voltage	2 V
Configuration	Single
Channel Mode	Enhancement
Rds On - Drain-Source Resistance	45 mOhms