STW56N60M2

R 1.00

MOSFET N-channel 600 V, 0.045 Ohm typ., 52 A MDmesh M2 Power MOSFET in a TO-247 package

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MOSFET N-channel 600 V, 0.045 Ohm typ., 52 A MDmesh M2 Power MOSFET in a TO-247 package

Products specifications

Tradename	MDmesh
Packaging	Tube
Vgs th - Gate-Source Threshold Voltage	2 V
Qg - Gate Charge	91 nC
Vds - Drain-Source Breakdown Voltage	600 V
Technology	Si
Mounting Style	Through Hole
Rds On - Drain-Source Resistance	55 mOhms
Pd - Power Dissipation	350 W
Maximum Operating Temperature	+ 150 C
Vgs - Gate-Source Voltage	10 V
Id - Continuous Drain Current	52 A
Number of Channels	1 Channel
Transistor Polarity	N-Channel
Configuration	Single
Channel Mode	Enhancement

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Products specifications

Tradename	MDmesh
Packaging	Tube
Vgs th - Gate-Source Threshold Voltage	2 V
Qg - Gate Charge	91 nC
Vds - Drain-Source Breakdown Voltage	600 V
Technology	Si
Mounting Style	Through Hole
Rds On - Drain-Source Resistance	55 mOhms
Pd - Power Dissipation	350 W
Maximum Operating Temperature	+ 150 C
Vgs - Gate-Source Voltage	10 V
Id - Continuous Drain Current	52 A
Number of Channels	1 Channel
Transistor Polarity	N-Channel
Configuration	Single
Channel Mode	Enhancement