STW56N60DM2

R 1.00

MOSFET N-channel 600 V, 0.052 Ohm typ., 50 A MDmesh DM2 Power MOSFET in a TO-247 package

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MOSFET N-channel 600 V, 0.052 Ohm typ., 50 A MDmesh DM2 Power MOSFET in a TO-247 package

Products specifications

Mounting Style	Through Hole
Channel Mode	Enhancement
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Vgs - Gate-Source Voltage	25 V
Qg - Gate Charge	90 nC
Number of Channels	1 Channel
Tradename	MDmesh
Id - Continuous Drain Current	50 A
Configuration	Single
Rds On - Drain-Source Resistance	60 mOhms
Transistor Polarity	N-Channel
Pd - Power Dissipation	360 W
Vgs th - Gate-Source Threshold Voltage	3 V
Technology	Si
Vds - Drain-Source Breakdown Voltage	600 V

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Products specifications

Mounting Style	Through Hole
Channel Mode	Enhancement
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Vgs - Gate-Source Voltage	25 V
Qg - Gate Charge	90 nC
Number of Channels	1 Channel
Tradename	MDmesh
Id - Continuous Drain Current	50 A
Configuration	Single
Rds On - Drain-Source Resistance	60 mOhms
Transistor Polarity	N-Channel
Pd - Power Dissipation	360 W
Vgs th - Gate-Source Threshold Voltage	3 V
Technology	Si
Vds - Drain-Source Breakdown Voltage	600 V