MOSFET N-channel 600 V FDMesh
Products specifications
Pd - Power Dissipation | 350 W |
Technology | Si |
Channel Mode | Enhancement |
Vgs - Gate-Source Voltage | 25 V |
Rds On - Drain-Source Resistance | 60 mOhms |
Packaging | Tube |
Id - Continuous Drain Current | 51 A |
Number of Channels | 1 Channel |
Mounting Style | Through Hole |
Configuration | Single |
Transistor Polarity | N-Channel |
Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C |
Vds - Drain-Source Breakdown Voltage | 600 V |