STW50N65DM2AG

R 1.00

MOSFET Automotive-grade N-channel 650 V, 0.070 Ohm typ., 38 A MDmesh DM2 Power MOSFET in a TO-247 package

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MOSFET Automotive-grade N-channel 650 V, 0.070 Ohm typ., 38 A MDmesh DM2 Power MOSFET in a TO-247 package

Products specifications

Vgs - Gate-Source Voltage	25 V
Tradename	MDmesh
Qualification	AEC-Q101
Mounting Style	Through Hole
Vds - Drain-Source Breakdown Voltage	650 V
Vgs th - Gate-Source Threshold Voltage	4 V
Minimum Operating Temperature	- 55 C
Number of Channels	1 Channel
Qg - Gate Charge	70 nC
Rds On - Drain-Source Resistance	87 mOhms
Technology	Si
Pd - Power Dissipation	300 W
Transistor Polarity	N-Channel
Maximum Operating Temperature	+ 150 C
Id - Continuous Drain Current	38 A
Channel Mode	Enhancement
Configuration	Single

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Products specifications

Vgs - Gate-Source Voltage	25 V
Tradename	MDmesh
Qualification	AEC-Q101
Mounting Style	Through Hole
Vds - Drain-Source Breakdown Voltage	650 V
Vgs th - Gate-Source Threshold Voltage	4 V
Minimum Operating Temperature	- 55 C
Number of Channels	1 Channel
Qg - Gate Charge	70 nC
Rds On - Drain-Source Resistance	87 mOhms
Technology	Si
Pd - Power Dissipation	300 W
Transistor Polarity	N-Channel
Maximum Operating Temperature	+ 150 C
Id - Continuous Drain Current	38 A
Channel Mode	Enhancement
Configuration	Single