Minimum Operating Temperature | - 55 C |
Number of Channels | 1 Channel |
Transistor Polarity | N-Channel |
Pd - Power Dissipation | 250 W |
Rds On - Drain-Source Resistance | 69 mOhms |
Channel Mode | Enhancement |
Maximum Operating Temperature | + 150 C |
Vgs - Gate-Source Voltage | 10 V |
Id - Continuous Drain Current | 39 A |
Qg - Gate Charge | 57 nC |
Mounting Style | Through Hole |
Configuration | Single |
Vgs th - Gate-Source Threshold Voltage | 3.25 V |
Technology | Si |
Vds - Drain-Source Breakdown Voltage | 600 V |