STW48N60M2-4

R 1.00

MOSFET N-channel 600 V, 0.06 Ohm typ., 42 A MDmesh M2 Power MOSFET in TO247-4 package

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MOSFET N-channel 600 V, 0.06 Ohm typ., 42 A MDmesh M2 Power MOSFET in TO247-4 package

Products specifications

Packaging	Tube
Pd - Power Dissipation	300 W
Id - Continuous Drain Current	42 A
Transistor Polarity	N-Channel
Maximum Operating Temperature	+ 150 C
Configuration	Single
Rds On - Drain-Source Resistance	60 mOhms
Number of Channels	1 Channel
Vgs - Gate-Source Voltage	25 V
Channel Mode	Enhancement
Vgs th - Gate-Source Threshold Voltage	2 V
Qg - Gate Charge	70 nC
Tradename	MDmesh
Mounting Style	Through Hole
Vds - Drain-Source Breakdown Voltage	600 V
Technology	Si

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Products specifications

Packaging	Tube
Pd - Power Dissipation	300 W
Id - Continuous Drain Current	42 A
Transistor Polarity	N-Channel
Maximum Operating Temperature	+ 150 C
Configuration	Single
Rds On - Drain-Source Resistance	60 mOhms
Number of Channels	1 Channel
Vgs - Gate-Source Voltage	25 V
Channel Mode	Enhancement
Vgs th - Gate-Source Threshold Voltage	2 V
Qg - Gate Charge	70 nC
Tradename	MDmesh
Mounting Style	Through Hole
Vds - Drain-Source Breakdown Voltage	600 V
Technology	Si