STW48N60DM2

R 1.00

MOSFET N-channel 600 V, 0.065 Ohm typ., 40 A MDmesh DM2 Power MOSFET in a TO-247 long leads package

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MOSFET N-channel 600 V, 0.065 Ohm typ., 40 A MDmesh DM2 Power MOSFET in a TO-247 long leads package

Products specifications

Vgs th - Gate-Source Threshold Voltage	3 V
Pd - Power Dissipation	300 W
Transistor Polarity	N-Channel
Channel Mode	Enhancement
Number of Channels	1 Channel
Vds - Drain-Source Breakdown Voltage	600 V
Mounting Style	Through Hole
Tradename	MDmesh
Id - Continuous Drain Current	40 A
Maximum Operating Temperature	+ 150 C
Minimum Operating Temperature	- 55 C
Vgs - Gate-Source Voltage	25 V
Technology	Si
Configuration	Single
Rds On - Drain-Source Resistance	65 mOhms
Qg - Gate Charge	70 nC

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Products specifications

Vgs th - Gate-Source Threshold Voltage	3 V
Pd - Power Dissipation	300 W
Transistor Polarity	N-Channel
Channel Mode	Enhancement
Number of Channels	1 Channel
Vds - Drain-Source Breakdown Voltage	600 V
Mounting Style	Through Hole
Tradename	MDmesh
Id - Continuous Drain Current	40 A
Maximum Operating Temperature	+ 150 C
Minimum Operating Temperature	- 55 C
Vgs - Gate-Source Voltage	25 V
Technology	Si
Configuration	Single
Rds On - Drain-Source Resistance	65 mOhms
Qg - Gate Charge	70 nC