MOSFET N-Ch 600V 0.075 Ohm 35A FDmesh II
Products specifications
Qg - Gate Charge | 145 nC |
Vds - Drain-Source Breakdown Voltage | 600 V |
Configuration | Single |
Channel Mode | Enhancement |
Mounting Style | Through Hole |
Packaging | Tube |
Id - Continuous Drain Current | 35 A |
Qualification | AEC-Q101 |
Vgs - Gate-Source Voltage | 25 V |
Rds On - Drain-Source Resistance | 88 mOhms |
Technology | Si |
Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C |
Number of Channels | 1 Channel |
Pd - Power Dissipation | 255 W |
Transistor Polarity | N-Channel |