MOSFET N-Ch 300 V 0.063 Ohm 42 A STripFET(TM)
Products specifications
Pd - Power Dissipation | 300 W |
Configuration | Single |
Vds - Drain-Source Breakdown Voltage | 300 V |
Channel Mode | Enhancement |
Tradename | STripFET |
Maximum Operating Temperature | + 175 C |
Vgs th - Gate-Source Threshold Voltage | 3 V |
Rds On - Drain-Source Resistance | 63 mOhms |
Qg - Gate Charge | 90 nC |
Minimum Operating Temperature | - 55 C |
Technology | Si |
Id - Continuous Drain Current | 42 A |
Qualification | AEC-Q101 |
Vgs - Gate-Source Voltage | 20 V |
Mounting Style | Through Hole |
Packaging | Tube |
Transistor Polarity | N-Channel |
Number of Channels | 1 Channel |