STW45N60DM6

R 1.00

MOSFET N-channel 600 V, 0.085 typ., 30 A MDmesh DM6 Power MOSFETs in TO-220 and TO-247 packages

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MOSFET N-channel 600 V, 0.085 typ., 30 A MDmesh DM6 Power MOSFETs in TO-220 and TO-247 packages

Products specifications

Qg - Gate Charge	44 nC
Channel Mode	Enhancement
Vds - Drain-Source Breakdown Voltage	600 V
Mounting Style	Through Hole
Rds On - Drain-Source Resistance	99 mOhms
Technology	Si
Vgs - Gate-Source Voltage	25 V
Vgs th - Gate-Source Threshold Voltage	3.25 V
Pd - Power Dissipation	210 W
Minimum Operating Temperature	- 55 C
Configuration	Single
Maximum Operating Temperature	+ 150 C
Number of Channels	1 Channel
Id - Continuous Drain Current	30 A
Transistor Polarity	N-Channel
Tradename	MDmesh

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Products specifications

Qg - Gate Charge	44 nC
Channel Mode	Enhancement
Vds - Drain-Source Breakdown Voltage	600 V
Mounting Style	Through Hole
Rds On - Drain-Source Resistance	99 mOhms
Technology	Si
Vgs - Gate-Source Voltage	25 V
Vgs th - Gate-Source Threshold Voltage	3.25 V
Pd - Power Dissipation	210 W
Minimum Operating Temperature	- 55 C
Configuration	Single
Maximum Operating Temperature	+ 150 C
Number of Channels	1 Channel
Id - Continuous Drain Current	30 A
Transistor Polarity	N-Channel
Tradename	MDmesh