STW45N60DM2AG

R 1.00

MOSFET Automotive-grade N-channel 600 V, 0.085 Ohm typ., 34 A MDmesh DM2 Power MOSFET in a TO-247 package

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MOSFET Automotive-grade N-channel 600 V, 0.085 Ohm typ., 34 A MDmesh DM2 Power MOSFET in a TO-247 package

Products specifications

Mounting Style	Through Hole
Configuration	Single
Transistor Polarity	N-Channel
Pd - Power Dissipation	250 W
Qg - Gate Charge	56 nC
Vds - Drain-Source Breakdown Voltage	650 V
Qualification	AEC-Q101
Minimum Operating Temperature	- 55 C
Tradename	MDmesh
Vgs - Gate-Source Voltage	25 V
Channel Mode	Enhancement
Maximum Operating Temperature	+ 150 C
Id - Continuous Drain Current	34 A
Vgs th - Gate-Source Threshold Voltage	4 V
Rds On - Drain-Source Resistance	93 mOhms
Technology	Si
Number of Channels	1 Channel

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Products specifications

Mounting Style	Through Hole
Configuration	Single
Transistor Polarity	N-Channel
Pd - Power Dissipation	250 W
Qg - Gate Charge	56 nC
Vds - Drain-Source Breakdown Voltage	650 V
Qualification	AEC-Q101
Minimum Operating Temperature	- 55 C
Tradename	MDmesh
Vgs - Gate-Source Voltage	25 V
Channel Mode	Enhancement
Maximum Operating Temperature	+ 150 C
Id - Continuous Drain Current	34 A
Vgs th - Gate-Source Threshold Voltage	4 V
Rds On - Drain-Source Resistance	93 mOhms
Technology	Si
Number of Channels	1 Channel