MOSFET N-channel 600V, 35A FDMesh II
Products specifications
Pd - Power Dissipation | 255 W |
Number of Channels | 1 Channel |
Vds - Drain-Source Breakdown Voltage | 600 V |
Channel Mode | Enhancement |
Minimum Operating Temperature | - 55 C |
Rds On - Drain-Source Resistance | 88 mOhms |
Technology | Si |
Maximum Operating Temperature | + 150 C |
Mounting Style | Through Hole |
Transistor Polarity | N-Channel |
Configuration | Single |
Packaging | Tube |
Tradename | FDmesh |
Id - Continuous Drain Current | 35 A |
Vgs - Gate-Source Voltage | 25 V |