STW42N60M2-EP

MOSFET N-channel 600 V, 0.076 Ohm typ., 34 A MDmesh M2 EP Power MOSFET in a TO-247 package

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MOSFETs N-channel 600 V, 0.076 Ohm typ 34 A MDmesh M2 EP Power MOSFET
Lead Time: 112 Days

Products specifications

Channel Mode	Enhancement
Configuration	Single
Vds - Drain-Source Breakdown Voltage	600 V
Transistor Polarity	N-Channel
Vgs - Gate-Source Voltage	25 V
Qg - Gate Charge	55 nC
Number of Channels	1 Channel
Id - Continuous Drain Current	34 A
Mounting Style	Through Hole
Pd - Power Dissipation	250 W
Technology	Si
Rds On - Drain-Source Resistance	87 mOhms
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Vgs th - Gate-Source Threshold Voltage	2 V
Tradename	MDmesh

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Products specifications

Channel Mode	Enhancement
Configuration	Single
Vds - Drain-Source Breakdown Voltage	600 V
Transistor Polarity	N-Channel
Vgs - Gate-Source Voltage	25 V
Qg - Gate Charge	55 nC
Number of Channels	1 Channel
Id - Continuous Drain Current	34 A
Mounting Style	Through Hole
Pd - Power Dissipation	250 W
Technology	Si
Rds On - Drain-Source Resistance	87 mOhms
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Vgs th - Gate-Source Threshold Voltage	2 V
Tradename	MDmesh