STW3N170

MOSFET N-channel 1700 V, 7 Ohm typ., 2.6 A, PowerMESH Power MOSFET in TO-247 package

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R 73.78

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MOSFETs N-channel 1700 V, 7 Ohm typ 2.6 A, PowerMESH Power MOSFET in TO-247 package
Lead Time: 112 Days

Products specifications

Vgs - Gate-Source Voltage	30 V
Vgs th - Gate-Source Threshold Voltage	3 V
Packaging	Tube
Vds - Drain-Source Breakdown Voltage	1.7 kV
Configuration	Single
Id - Continuous Drain Current	2.6 A
Tradename	PowerMESH
Rds On - Drain-Source Resistance	13 Ohms
Channel Mode	Enhancement
Number of Channels	1 Channel
Technology	Si
Pd - Power Dissipation	63 W
Transistor Polarity	N-Channel
Mounting Style	Through Hole
Qg - Gate Charge	44 nC
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C

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Products specifications

Vgs - Gate-Source Voltage	30 V
Vgs th - Gate-Source Threshold Voltage	3 V
Packaging	Tube
Vds - Drain-Source Breakdown Voltage	1.7 kV
Configuration	Single
Id - Continuous Drain Current	2.6 A
Tradename	PowerMESH
Rds On - Drain-Source Resistance	13 Ohms
Channel Mode	Enhancement
Number of Channels	1 Channel
Technology	Si
Pd - Power Dissipation	63 W
Transistor Polarity	N-Channel
Mounting Style	Through Hole
Qg - Gate Charge	44 nC
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C