MOSFETs Automotive-grade N-channel 600 V, 0.094 Ohm typ 28 A MDmesh DM2 Power MOSFET
Lead Time: 828 Days
Products specifications
Pd - Power Dissipation | 210 W |
Vgs th - Gate-Source Threshold Voltage | 4 V |
Packaging | Tube |
Vds - Drain-Source Breakdown Voltage | 600 V |
Channel Mode | Enhancement |
Qg - Gate Charge | 54 nC |
Mounting Style | Through Hole |
Technology | Si |
Configuration | Single |
Tradename | MDmesh |
Minimum Operating Temperature | - 55 C |
Vgs - Gate-Source Voltage | 30 V |
Qualification | AEC-Q101 |
Number of Channels | 1 Channel |
Maximum Operating Temperature | + 150 C |
Rds On - Drain-Source Resistance | 110 mOhms |
Id - Continuous Drain Current | 28 A |
Transistor Polarity | N-Channel |