MOSFETs Auto-grade N-CH 600V 0.097Ohm typ 29A
Lead Time: 0 Days
Products specifications
Pd - Power Dissipation | 190 W |
Vgs th - Gate-Source Threshold Voltage | 4 V |
Rds On - Drain-Source Resistance | 110 mOhms |
Maximum Operating Temperature | + 150 C |
Minimum Operating Temperature | - 55 C |
Vgs - Gate-Source Voltage | 25 V |
Number of Channels | 1 Channel |
Packaging | Tube |
Mounting Style | Through Hole |
Id - Continuous Drain Current | 29 A |
Qualification | AEC-Q101 |
Technology | Si |
Transistor Polarity | N-Channel |
Qg - Gate Charge | 80.4 nC |
Configuration | Single |
Vds - Drain-Source Breakdown Voltage | 650 V |