STW35N60DM2

MOSFET N-channel 600 V, 0.094 Ohm typ., 28 A MDmesh DM2 Power MOSFETs in TO-247 package

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R 125.48

R 111.21

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R 88.05

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MOSFETs N-channel 600 V, 0.094 Ohm typ 28 A MDmesh DM2 Power MOSFETs in TO-247 package
Lead Time: 112 Days

Products specifications

Vgs th - Gate-Source Threshold Voltage	3 V
Maximum Operating Temperature	+ 150 C
Channel Mode	Enhancement
Minimum Operating Temperature	- 55 C
Technology	Si
Transistor Polarity	N-Channel
Id - Continuous Drain Current	28 A
Number of Channels	1 Channel
Mounting Style	Through Hole
Vgs - Gate-Source Voltage	25 V
Vds - Drain-Source Breakdown Voltage	600 V
Configuration	Single
Pd - Power Dissipation	210 W
Tradename	MDmesh
Qg - Gate Charge	54 nC
Rds On - Drain-Source Resistance	110 mOhms

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Products specifications

Vgs th - Gate-Source Threshold Voltage	3 V
Maximum Operating Temperature	+ 150 C
Channel Mode	Enhancement
Minimum Operating Temperature	- 55 C
Technology	Si
Transistor Polarity	N-Channel
Id - Continuous Drain Current	28 A
Number of Channels	1 Channel
Mounting Style	Through Hole
Vgs - Gate-Source Voltage	25 V
Vds - Drain-Source Breakdown Voltage	600 V
Configuration	Single
Pd - Power Dissipation	210 W
Tradename	MDmesh
Qg - Gate Charge	54 nC
Rds On - Drain-Source Resistance	110 mOhms