STW34NM60ND

MOSFET N-Ch 600V 0.097 Ohm 29A FDmesh II FD

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R 156.99

R 153.49

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MOSFETs N-Ch 600V 0.097 Ohm 29A FDmesh II FD
Lead Time: 112 Days

Products specifications

Transistor Polarity	N-Channel
Technology	Si
Number of Channels	1 Channel
Vds - Drain-Source Breakdown Voltage	600 V
Id - Continuous Drain Current	29 A
Rds On - Drain-Source Resistance	110 mOhms
Packaging	Tube
Maximum Operating Temperature	+ 150 C
Minimum Operating Temperature	- 55 C
Configuration	Single
Pd - Power Dissipation	190 W
Mounting Style	Through Hole
Vgs - Gate-Source Voltage	25 V

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Products specifications

Transistor Polarity	N-Channel
Technology	Si
Number of Channels	1 Channel
Vds - Drain-Source Breakdown Voltage	600 V
Id - Continuous Drain Current	29 A
Rds On - Drain-Source Resistance	110 mOhms
Packaging	Tube
Maximum Operating Temperature	+ 150 C
Minimum Operating Temperature	- 55 C
Configuration	Single
Pd - Power Dissipation	190 W
Mounting Style	Through Hole
Vgs - Gate-Source Voltage	25 V