MOSFETs N-Ch 600V 0.092V Ohm 29A MDmesh II PWR M
Lead Time: 112 Days
Products specifications
Configuration | Single |
Vds - Drain-Source Breakdown Voltage | 600 V |
Tradename | MDmesh |
Packaging | Tube |
Technology | Si |
Vgs - Gate-Source Voltage | 10 V |
Maximum Operating Temperature | + 150 C |
Transistor Polarity | N-Channel |
Id - Continuous Drain Current | 31.5 A |
Vgs th - Gate-Source Threshold Voltage | 2 V |
Rds On - Drain-Source Resistance | 105 mOhms |
Channel Mode | Enhancement |
Qg - Gate Charge | 84 nC |
Number of Channels | 1 Channel |
Pd - Power Dissipation | 250 W |
Mounting Style | Through Hole |