STW33N60DM2

R 1.00

MOSFET N-channel 600 V, 0.110 Ohm typ., 24 A MDmesh DM2 Power MOSFET in TO-247 package

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MOSFET N-channel 600 V, 0.110 Ohm typ., 24 A MDmesh DM2 Power MOSFET in TO-247 package

Products specifications

Channel Mode	Enhancement
Rds On - Drain-Source Resistance	130 mOhms
Qg - Gate Charge	43 nC
Mounting Style	Through Hole
Vgs - Gate-Source Voltage	25 V
Number of Channels	1 Channel
Id - Continuous Drain Current	24 A
Transistor Polarity	N-Channel
Tradename	MDmesh
Maximum Operating Temperature	+ 150 C
Configuration	Single
Pd - Power Dissipation	190 W
Vgs th - Gate-Source Threshold Voltage	3 V
Vds - Drain-Source Breakdown Voltage	650 V
Minimum Operating Temperature	- 55 C
Technology	Si

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Products specifications

Channel Mode	Enhancement
Rds On - Drain-Source Resistance	130 mOhms
Qg - Gate Charge	43 nC
Mounting Style	Through Hole
Vgs - Gate-Source Voltage	25 V
Number of Channels	1 Channel
Id - Continuous Drain Current	24 A
Transistor Polarity	N-Channel
Tradename	MDmesh
Maximum Operating Temperature	+ 150 C
Configuration	Single
Pd - Power Dissipation	190 W
Vgs th - Gate-Source Threshold Voltage	3 V
Vds - Drain-Source Breakdown Voltage	650 V
Minimum Operating Temperature	- 55 C
Technology	Si