MOSFET N-Ch 500V 0.13 Ohm 22A MDmesh II FET
Products specifications
Id - Continuous Drain Current | 13.86 A |
Vgs th - Gate-Source Threshold Voltage | 4 V |
Pd - Power Dissipation | 190 W |
Packaging | Tube |
Qg - Gate Charge | 62.5 nC |
Mounting Style | Through Hole |
Technology | Si |
Tradename | MDmesh |
Configuration | Single |
Rds On - Drain-Source Resistance | 130 mOhms |
Vds - Drain-Source Breakdown Voltage | 500 V |
Vgs - Gate-Source Voltage | 25 V |
Transistor Polarity | N-Channel |
Number of Channels | 1 Channel |