MOSFET POWER MOSFET N-CH 650V 22 A
Products specifications
Vds - Drain-Source Breakdown Voltage | 650 V |
Rds On - Drain-Source Resistance | 139 mOhms |
Id - Continuous Drain Current | 22 A |
Technology | Si |
Mounting Style | Through Hole |
Vgs th - Gate-Source Threshold Voltage | 5 V |
Tradename | MDmesh |
Vgs - Gate-Source Voltage | 3 V |
Transistor Polarity | N-Channel |
Number of Channels | 1 Channel |
Packaging | Tube |
Qg - Gate Charge | 64 nC |
Configuration | Single |
Pd - Power Dissipation | 140 W |
Maximum Operating Temperature | + 150 C |