MOSFET N-chanel 600 V 0.120 Ohm typ 24 A
Products specifications
Number of Channels | 1 Channel |
Technology | Si |
Transistor Polarity | N-Channel |
Rds On - Drain-Source Resistance | 150 mOhms |
Configuration | Single |
Vds - Drain-Source Breakdown Voltage | 650 V |
Pd - Power Dissipation | 190 W |
Vgs - Gate-Source Voltage | 25 V |
Id - Continuous Drain Current | 23 A |
Mounting Style | Through Hole |
Packaging | Tube |
Qg - Gate Charge | 62.5 nC |
Vgs th - Gate-Source Threshold Voltage | 4 V |