MOSFET N-Ch 500V 0.135 21A MDmesh II
Lead Time: 182 Days
Products specifications
Tradename | MDmesh |
Configuration | Single |
Qg - Gate Charge | 50 nC |
Technology | Si |
Packaging | Tube |
Rds On - Drain-Source Resistance | 158 mOhms |
Number of Channels | 1 Channel |
Mounting Style | Through Hole |
Vgs th - Gate-Source Threshold Voltage | 4 V |
Transistor Polarity | N-Channel |
Pd - Power Dissipation | 150 W |
Maximum Operating Temperature | + 150 C |
Vds - Drain-Source Breakdown Voltage | 500 V |
Id - Continuous Drain Current | 21 A |
Vgs - Gate-Source Voltage | 25 V |