STW28N65M2

R 1.00

MOSFET N-channel 650 V, 0.15 Ohm typ., 20 A MDmesh M2 Power MOSFET in TO-247 package

Availability: Out of stock

Qty:

Free shipping

MOSFET N-channel 650 V, 0.15 Ohm typ., 20 A MDmesh M2 Power MOSFET in TO-247 package

Products specifications

Vgs th - Gate-Source Threshold Voltage	2 V
Maximum Operating Temperature	+ 150 C
Vgs - Gate-Source Voltage	10 V
Technology	Si
Configuration	Single
Pd - Power Dissipation	170 W
Vds - Drain-Source Breakdown Voltage	650 V
Mounting Style	Through Hole
Transistor Polarity	N-Channel
Qg - Gate Charge	35 nC
Number of Channels	1 Channel
Packaging	Tube
Channel Mode	Enhancement
Tradename	MDmesh
Id - Continuous Drain Current	20 A
Rds On - Drain-Source Resistance	180 mOhms

Your name *

Your email *

Enquiry *

Products specifications

Vgs th - Gate-Source Threshold Voltage	2 V
Maximum Operating Temperature	+ 150 C
Vgs - Gate-Source Voltage	10 V
Technology	Si
Configuration	Single
Pd - Power Dissipation	170 W
Vds - Drain-Source Breakdown Voltage	650 V
Mounting Style	Through Hole
Transistor Polarity	N-Channel
Qg - Gate Charge	35 nC
Number of Channels	1 Channel
Packaging	Tube
Channel Mode	Enhancement
Tradename	MDmesh
Id - Continuous Drain Current	20 A
Rds On - Drain-Source Resistance	180 mOhms