STW27N60M2-EP

R 1.00

MOSFET N-channel 600 V, 0.150 Ohm typ., 20 A MDmesh M2 EP Power MOSFET in a TO-247 package

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MOSFET N-channel 600 V, 0.150 Ohm typ., 20 A MDmesh M2 EP Power MOSFET in a TO-247 package

Products specifications

Tradename	MDmesh
Vgs - Gate-Source Voltage	25 V
Channel Mode	Enhancement
Transistor Polarity	N-Channel
Configuration	Single
Rds On - Drain-Source Resistance	163 mOhms
Qg - Gate Charge	33 nC
Id - Continuous Drain Current	20 A
Vgs th - Gate-Source Threshold Voltage	2 V
Number of Channels	1 Channel
Maximum Operating Temperature	+ 150 C
Minimum Operating Temperature	- 55 C
Vds - Drain-Source Breakdown Voltage	600 V
Pd - Power Dissipation	170 W
Technology	Si
Mounting Style	Through Hole

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Products specifications

Tradename	MDmesh
Vgs - Gate-Source Voltage	25 V
Channel Mode	Enhancement
Transistor Polarity	N-Channel
Configuration	Single
Rds On - Drain-Source Resistance	163 mOhms
Qg - Gate Charge	33 nC
Id - Continuous Drain Current	20 A
Vgs th - Gate-Source Threshold Voltage	2 V
Number of Channels	1 Channel
Maximum Operating Temperature	+ 150 C
Minimum Operating Temperature	- 55 C
Vds - Drain-Source Breakdown Voltage	600 V
Pd - Power Dissipation	170 W
Technology	Si
Mounting Style	Through Hole