MOSFET N-channel 600 V Mdmesh II Power
Products specifications
Channel Mode | Enhancement |
Configuration | Single |
Mounting Style | Through Hole |
Number of Channels | 1 Channel |
Packaging | Tube |
Id - Continuous Drain Current | 20 A |
Tradename | MDmesh |
Technology | Si |
Qg - Gate Charge | 60 nC |
Pd - Power Dissipation | 140 W |
Transistor Polarity | N-Channel |
Rds On - Drain-Source Resistance | 165 mOhms |
Vds - Drain-Source Breakdown Voltage | 600 V |
Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C |
Vgs th - Gate-Source Threshold Voltage | 2 V |
Vgs - Gate-Source Voltage | 10 V |