STW25NM60ND

MOSFET N-channel 600V, 21A FDMesh II
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SKU: STW25NM60ND

Availability: 38 in stock

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R 246.12

R 222.43

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MOSFET N-channel 600V, 21A FDMesh II
Lead Time: 0 Days

Products specifications

Technology	Si
Channel Mode	Enhancement
Number of Channels	1 Channel
Pd - Power Dissipation	160 W
Vds - Drain-Source Breakdown Voltage	600 V
Mounting Style	Through Hole
Transistor Polarity	N-Channel
Maximum Operating Temperature	+ 150 C
Id - Continuous Drain Current	21 A
Packaging	Tube
Vgs - Gate-Source Voltage	25 V
Configuration	Single
Rds On - Drain-Source Resistance	160 mOhms
Minimum Operating Temperature	- 55 C

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Products specifications

Technology	Si
Channel Mode	Enhancement
Number of Channels	1 Channel
Pd - Power Dissipation	160 W
Vds - Drain-Source Breakdown Voltage	600 V
Mounting Style	Through Hole
Transistor Polarity	N-Channel
Maximum Operating Temperature	+ 150 C
Id - Continuous Drain Current	21 A
Packaging	Tube
Vgs - Gate-Source Voltage	25 V
Configuration	Single
Rds On - Drain-Source Resistance	160 mOhms
Minimum Operating Temperature	- 55 C

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