MOSFET N-Ch 850V 0.2Ohm typ 19A Zener-protected
Products specifications
Vds - Drain-Source Breakdown Voltage | 850 V |
Transistor Polarity | N-Channel |
Rds On - Drain-Source Resistance | 275 mOhms |
Vgs th - Gate-Source Threshold Voltage | 4 V |
Configuration | Single |
Id - Continuous Drain Current | 19 A |
Pd - Power Dissipation | 250 W |
Mounting Style | Through Hole |
Technology | Si |
Packaging | Tube |
Vgs - Gate-Source Voltage | 30 V |
Minimum Operating Temperature | - 55 C |
Number of Channels | 1 Channel |
Maximum Operating Temperature | + 150 C |
Tradename | MDmesh |
Qg - Gate Charge | 38 nC |