MOSFET N-Ch 600 Volt 20 Amp
Products specifications
Configuration | Single |
Maximum Operating Temperature | + 150 C |
Technology | Si |
Pd - Power Dissipation | 214 W |
Vgs - Gate-Source Voltage | 30 V |
Number of Channels | 1 Channel |
Packaging | Tube |
Vds - Drain-Source Breakdown Voltage | 600 V |
Id - Continuous Drain Current | 20 A |
Transistor Polarity | N-Channel |
Channel Mode | Enhancement |
Mounting Style | Through Hole |
Tradename | FDmesh |
Minimum Operating Temperature | - 65 C |
Rds On - Drain-Source Resistance | 290 mOhms |