STW20N90K5

R 1.00

MOSFET N-channel 900 V, 0.21 Ohm typ., 20 A MDmesh K5 Power MOSFET in a TO-247 package

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MOSFET N-channel 900 V, 0.21 Ohm typ., 20 A MDmesh K5 Power MOSFET in a TO-247 package

Products specifications

Transistor Polarity	N-Channel
Qg - Gate Charge	40 nC
Pd - Power Dissipation	250 W
Vds - Drain-Source Breakdown Voltage	900 V
Tradename	MDmesh
Mounting Style	Through Hole
Maximum Operating Temperature	+ 150 C
Minimum Operating Temperature	- 55 C
Rds On - Drain-Source Resistance	210 mOhms
Configuration	Single
Number of Channels	1 Channel
Technology	Si
Vgs th - Gate-Source Threshold Voltage	3 V
Vgs - Gate-Source Voltage	30 V
Id - Continuous Drain Current	20 A
Channel Mode	Enhancement

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Products specifications

Transistor Polarity	N-Channel
Qg - Gate Charge	40 nC
Pd - Power Dissipation	250 W
Vds - Drain-Source Breakdown Voltage	900 V
Tradename	MDmesh
Mounting Style	Through Hole
Maximum Operating Temperature	+ 150 C
Minimum Operating Temperature	- 55 C
Rds On - Drain-Source Resistance	210 mOhms
Configuration	Single
Number of Channels	1 Channel
Technology	Si
Vgs th - Gate-Source Threshold Voltage	3 V
Vgs - Gate-Source Voltage	30 V
Id - Continuous Drain Current	20 A
Channel Mode	Enhancement