MOSFET N-Ch 600 V 0.27 Ohm 13 A MDmesh(TM)
Products specifications
Transistor Polarity | N-Channel |
Number of Channels | 1 Channel |
Qg - Gate Charge | 35 nC |
Mounting Style | Through Hole |
Pd - Power Dissipation | 110 W |
Vds - Drain-Source Breakdown Voltage | 600 V |
Rds On - Drain-Source Resistance | 260 mOhms |
Qualification | AEC-Q101 |
Vgs th - Gate-Source Threshold Voltage | 3 V |
Tradename | MDmesh |
Vgs - Gate-Source Voltage | 25 V |
Packaging | Tube |
Technology | Si |
Configuration | Single |
Id - Continuous Drain Current | 13 A |
Channel Mode | Enhancement |
Maximum Operating Temperature | + 150 C |
Minimum Operating Temperature | - 55 C |