MOSFET POWER MOSFET N-CH 500V 13A
Products specifications
Configuration | Single |
Id - Continuous Drain Current | 14 A |
Vgs th - Gate-Source Threshold Voltage | 4 V |
Vds - Drain-Source Breakdown Voltage | 500 V |
Packaging | Tube |
Tradename | MDmesh |
Number of Channels | 1 Channel |
Transistor Polarity | N-Channel |
Technology | Si |
Vgs - Gate-Source Voltage | 2 V |
Mounting Style | Through Hole |
Pd - Power Dissipation | 110 W |
Qg - Gate Charge | 34 nC |
Rds On - Drain-Source Resistance | 250 mOhms |
Maximum Operating Temperature | + 150 C |