MOSFET N-Ch 650V 0.198 Ohm 15A MDmesh FET
Products specifications
Qg - Gate Charge | 31 nC |
Tradename | MDmesh |
Packaging | Tube |
Technology | Si |
Vgs th - Gate-Source Threshold Voltage | 5 V |
Number of Channels | 1 Channel |
Mounting Style | Through Hole |
Pd - Power Dissipation | 110 W |
Rds On - Drain-Source Resistance | 220 mOhms |
Id - Continuous Drain Current | 9.4 A |
Transistor Polarity | N-Channel |
Vgs - Gate-Source Voltage | 25 V |
Configuration | Single |
Vds - Drain-Source Breakdown Voltage | 650 V |