MOSFET N-Ch 950V SuperMESH3 Zener-Protected 10A
Products specifications
Tradename | SuperMESH |
Rds On - Drain-Source Resistance | 680 mOhms |
Vgs - Gate-Source Voltage | 30 V |
Mounting Style | Through Hole |
Vgs th - Gate-Source Threshold Voltage | 4 V |
Vds - Drain-Source Breakdown Voltage | 950 V |
Pd - Power Dissipation | 190 W |
Packaging | Tube |
Technology | Si |
Qg - Gate Charge | 51 nC |
Maximum Operating Temperature | + 150 C |
Id - Continuous Drain Current | 10 A |
Configuration | Single |
Minimum Operating Temperature | - 55 C |
Transistor Polarity | N-Channel |
Number of Channels | 1 Channel |