STW13N60M2

R 1.00

MOSFET N-channel 600 V, 0.35 Ohm typ., 11 A MDmesh M2 Power MOSFET in TO-247 package

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MOSFET N-channel 600 V, 0.35 Ohm typ., 11 A MDmesh M2 Power MOSFET in TO-247 package

Products specifications

Tradename	MDmesh
Pd - Power Dissipation	110 W
Rds On - Drain-Source Resistance	380 mOhms
Packaging	Tube
Maximum Operating Temperature	+ 150 C
Mounting Style	Through Hole
Configuration	Single
Minimum Operating Temperature	- 55 C
Channel Mode	Enhancement
Vgs th - Gate-Source Threshold Voltage	3 V
Number of Channels	1 Channel
Technology	Si
Vgs - Gate-Source Voltage	25 V
Id - Continuous Drain Current	11 A
Transistor Polarity	N-Channel
Qg - Gate Charge	17 nC
Vds - Drain-Source Breakdown Voltage	600 V

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Products specifications

Tradename	MDmesh
Pd - Power Dissipation	110 W
Rds On - Drain-Source Resistance	380 mOhms
Packaging	Tube
Maximum Operating Temperature	+ 150 C
Mounting Style	Through Hole
Configuration	Single
Minimum Operating Temperature	- 55 C
Channel Mode	Enhancement
Vgs th - Gate-Source Threshold Voltage	3 V
Number of Channels	1 Channel
Technology	Si
Vgs - Gate-Source Voltage	25 V
Id - Continuous Drain Current	11 A
Transistor Polarity	N-Channel
Qg - Gate Charge	17 nC
Vds - Drain-Source Breakdown Voltage	600 V