STU9HN65M2

MOSFET N-channel 650 V, 0.71 Ohm typ., 5.5 A MDmesh M2 Power MOSFET in IPAK package

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Products specifications

Vgs - Gate-Source Voltage	25 V
Minimum Operating Temperature	- 55 C
Configuration	Single
Maximum Operating Temperature	+ 150 C
Qg - Gate Charge	11.5 nC
Channel Mode	Enhancement
Vds - Drain-Source Breakdown Voltage	600 V
Tradename	MDmesh
Vgs th - Gate-Source Threshold Voltage	4 V
Pd - Power Dissipation	60 W
Mounting Style	Through Hole
Number of Channels	1 Channel
Id - Continuous Drain Current	5.5 A
Rds On - Drain-Source Resistance	820 mOhms
Technology	Si
Transistor Polarity	N-Channel

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Products specifications

Vgs - Gate-Source Voltage	25 V
Minimum Operating Temperature	- 55 C
Configuration	Single
Maximum Operating Temperature	+ 150 C
Qg - Gate Charge	11.5 nC
Channel Mode	Enhancement
Vds - Drain-Source Breakdown Voltage	600 V
Tradename	MDmesh
Vgs th - Gate-Source Threshold Voltage	4 V
Pd - Power Dissipation	60 W
Mounting Style	Through Hole
Number of Channels	1 Channel
Id - Continuous Drain Current	5.5 A
Rds On - Drain-Source Resistance	820 mOhms
Technology	Si
Transistor Polarity	N-Channel