STU8N80K5

MOSFET N-Ch 800 V 0.76 Ohm 6 A Zener-protected

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R 34.74

R 26.93

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MOSFETs N-Ch 800 V 0.76 Ohm 6 A Zener-protected
Lead Time: 98 Days

Products specifications

Vgs th - Gate-Source Threshold Voltage	4 V
Packaging	Tube
Configuration	Single
Pd - Power Dissipation	110 W
Mounting Style	Through Hole
Channel Mode	Enhancement
Technology	Si
Transistor Polarity	N-Channel
Vgs - Gate-Source Voltage	30 V
Tradename	SuperMESH
Id - Continuous Drain Current	6 A
Number of Channels	1 Channel
Rds On - Drain-Source Resistance	950 mOhms
Qg - Gate Charge	16.5 nC
Maximum Operating Temperature	+ 150 C
Minimum Operating Temperature	- 55 C
Vds - Drain-Source Breakdown Voltage	800 V

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Products specifications

Vgs th - Gate-Source Threshold Voltage	4 V
Packaging	Tube
Configuration	Single
Pd - Power Dissipation	110 W
Mounting Style	Through Hole
Channel Mode	Enhancement
Technology	Si
Transistor Polarity	N-Channel
Vgs - Gate-Source Voltage	30 V
Tradename	SuperMESH
Id - Continuous Drain Current	6 A
Number of Channels	1 Channel
Rds On - Drain-Source Resistance	950 mOhms
Qg - Gate Charge	16.5 nC
Maximum Operating Temperature	+ 150 C
Minimum Operating Temperature	- 55 C
Vds - Drain-Source Breakdown Voltage	800 V