STU7NM60N

MOSFET N-Ch 600V 0.84 Ohm 5A 2nd Gen MDmesh

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R 25.18

R 24.64

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MOSFETs N-Ch 600V 0.84 Ohm 5A 2nd Gen MDmesh
Lead Time: 112 Days

Products specifications

Vds - Drain-Source Breakdown Voltage	600 V
Id - Continuous Drain Current	5 A
Tradename	MDmesh
Qg - Gate Charge	14 nC
Mounting Style	Through Hole
Transistor Polarity	N-Channel
Configuration	Single
Packaging	Tube
Pd - Power Dissipation	45 W
Technology	Si
Number of Channels	1 Channel
Vgs - Gate-Source Voltage	25 V
Rds On - Drain-Source Resistance	900 mOhms
Channel Mode	Enhancement
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C

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Products specifications

Vds - Drain-Source Breakdown Voltage	600 V
Id - Continuous Drain Current	5 A
Tradename	MDmesh
Qg - Gate Charge	14 nC
Mounting Style	Through Hole
Transistor Polarity	N-Channel
Configuration	Single
Packaging	Tube
Pd - Power Dissipation	45 W
Technology	Si
Number of Channels	1 Channel
Vgs - Gate-Source Voltage	25 V
Rds On - Drain-Source Resistance	900 mOhms
Channel Mode	Enhancement
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C