STU7N80K5

MOSFET N-Ch 800 V 0.95 Ohm 6 A Zener-protecte

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MOSFETs N-Ch 800 V 0.95 Ohm 6 A Zener-protecte
Lead Time: 98 Days

Products specifications

Number of Channels	1 Channel
Vds - Drain-Source Breakdown Voltage	800 V
Rds On - Drain-Source Resistance	950 mOhms
Tradename	MDmesh
Qg - Gate Charge	13.4 nC
Packaging	Tube
Id - Continuous Drain Current	6 A
Vgs th - Gate-Source Threshold Voltage	4 V
Maximum Operating Temperature	+ 150 C
Minimum Operating Temperature	- 55 C
Technology	Si
Transistor Polarity	N-Channel
Vgs - Gate-Source Voltage	30 V
Pd - Power Dissipation	110 W
Mounting Style	Through Hole
Channel Mode	Enhancement
Configuration	Single

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Products specifications

Number of Channels	1 Channel
Vds - Drain-Source Breakdown Voltage	800 V
Rds On - Drain-Source Resistance	950 mOhms
Tradename	MDmesh
Qg - Gate Charge	13.4 nC
Packaging	Tube
Id - Continuous Drain Current	6 A
Vgs th - Gate-Source Threshold Voltage	4 V
Maximum Operating Temperature	+ 150 C
Minimum Operating Temperature	- 55 C
Technology	Si
Transistor Polarity	N-Channel
Vgs - Gate-Source Voltage	30 V
Pd - Power Dissipation	110 W
Mounting Style	Through Hole
Channel Mode	Enhancement
Configuration	Single