MOSFETs N-channel 1050 V, 1.4 Ohm typ 4 A MDmesh K5 Power MOSFETs in an IPAK package
Products specifications
Id - Continuous Drain Current | 4 A |
Transistor Polarity | N-Channel |
Vgs - Gate-Source Voltage | 30 V |
Pd - Power Dissipation | 110 W |
Tradename | SuperMESH |
Qg - Gate Charge | 17 nC |
Vgs th - Gate-Source Threshold Voltage | 3 V |
Technology | Si |
Mounting Style | Through Hole |
Vds - Drain-Source Breakdown Voltage | 1.05 kV |
Maximum Operating Temperature | + 150 C |
Number of Channels | 1 Channel |
Minimum Operating Temperature | - 55 C |
Configuration | Single |
Channel Mode | Enhancement |
Rds On - Drain-Source Resistance | 2 Ohms |