STU6N95K5

MOSFET N-Ch 950V 1Ohm 9A pwr MDmesh K5

Availability: 5913 in stock

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R 39.58

R 32.04

R 31.51

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MOSFETs N-Ch 950V 1Ohm 9A pwr MDmesh K5
Lead Time: 98 Days

Products specifications

Pd - Power Dissipation	90 W
Id - Continuous Drain Current	9 A
Vgs th - Gate-Source Threshold Voltage	4 V
Tradename	MDmesh
Packaging	Tube
Vds - Drain-Source Breakdown Voltage	950 V
Technology	Si
Qg - Gate Charge	13 nC
Rds On - Drain-Source Resistance	1.25 Ohms
Vgs - Gate-Source Voltage	30 V
Maximum Operating Temperature	+ 150 C
Mounting Style	Through Hole
Minimum Operating Temperature	- 55 C
Transistor Polarity	N-Channel

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Products specifications

Pd - Power Dissipation	90 W
Id - Continuous Drain Current	9 A
Vgs th - Gate-Source Threshold Voltage	4 V
Tradename	MDmesh
Packaging	Tube
Vds - Drain-Source Breakdown Voltage	950 V
Technology	Si
Qg - Gate Charge	13 nC
Rds On - Drain-Source Resistance	1.25 Ohms
Vgs - Gate-Source Voltage	30 V
Maximum Operating Temperature	+ 150 C
Mounting Style	Through Hole
Minimum Operating Temperature	- 55 C
Transistor Polarity	N-Channel