STU6N90K5

MOSFET N-channel 900 V, 0.91 Ohm typ., 6 A MDmesh K5 Power MOSFET in an IPAK package

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MOSFETs N-channel 900 V, 0.91 Ohm typ 6 A MDmesh K5 Power MOSFET in an IPAK package
Lead Time: 98 Days

Products specifications

Channel Mode	Enhancement
Technology	Si
Qg - Gate Charge	11 nC
Pd - Power Dissipation	110 W
Rds On - Drain-Source Resistance	910 mOhms
Id - Continuous Drain Current	6 A
Vgs th - Gate-Source Threshold Voltage	3 V
Vgs - Gate-Source Voltage	30 V
Minimum Operating Temperature	- 55 C
Mounting Style	Through Hole
Maximum Operating Temperature	+ 150 C
Configuration	Single
Transistor Polarity	N-Channel
Number of Channels	1 Channel
Tradename	MDmesh
Vds - Drain-Source Breakdown Voltage	900 V

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Products specifications

Channel Mode	Enhancement
Technology	Si
Qg - Gate Charge	11 nC
Pd - Power Dissipation	110 W
Rds On - Drain-Source Resistance	910 mOhms
Id - Continuous Drain Current	6 A
Vgs th - Gate-Source Threshold Voltage	3 V
Vgs - Gate-Source Voltage	30 V
Minimum Operating Temperature	- 55 C
Mounting Style	Through Hole
Maximum Operating Temperature	+ 150 C
Configuration	Single
Transistor Polarity	N-Channel
Number of Channels	1 Channel
Tradename	MDmesh
Vds - Drain-Source Breakdown Voltage	900 V