STU6N65M2

MOSFET N-channel 650 V, 1.2 Ohm typ., 4 A MDmesh M2 Power MOSFET in IPAK package

Availability: 3000 in stock

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MOSFETs N-channel 650 V, 1.2 Ohm typ 4 A MDmesh M2 Power MOSFET in IPAK package
Lead Time: 112 Days

Products specifications

Id - Continuous Drain Current	4 A
Pd - Power Dissipation	60 W
Rds On - Drain-Source Resistance	1.35 Ohms
Qg - Gate Charge	9.8 nC
Vds - Drain-Source Breakdown Voltage	650 V
Technology	Si
Minimum Operating Temperature	- 55 C
Packaging	Tube
Maximum Operating Temperature	+ 150 C
Vgs - Gate-Source Voltage	25 V
Transistor Polarity	N-Channel
Tradename	MDmesh
Mounting Style	Through Hole
Vgs th - Gate-Source Threshold Voltage	3 V

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Products specifications

Id - Continuous Drain Current	4 A
Pd - Power Dissipation	60 W
Rds On - Drain-Source Resistance	1.35 Ohms
Qg - Gate Charge	9.8 nC
Vds - Drain-Source Breakdown Voltage	650 V
Technology	Si
Minimum Operating Temperature	- 55 C
Packaging	Tube
Maximum Operating Temperature	+ 150 C
Vgs - Gate-Source Voltage	25 V
Transistor Polarity	N-Channel
Tradename	MDmesh
Mounting Style	Through Hole
Vgs th - Gate-Source Threshold Voltage	3 V