MOSFET N-Ch 650 V 1.1 Ohm 5.4 A SuperMESH3
Products specifications
Mounting Style | Through Hole |
Transistor Polarity | N-Channel |
Pd - Power Dissipation | 110 W |
Vgs - Gate-Source Voltage | 30 V |
Configuration | Single |
Id - Continuous Drain Current | 5.4 A |
Technology | Si |
Rds On - Drain-Source Resistance | 1.1 Ohms |
Qg - Gate Charge | 33 nC |
Maximum Operating Temperature | + 150 C |
Tradename | SuperMESH |
Number of Channels | 1 Channel |
Packaging | Tube |
Channel Mode | Enhancement |
Vds - Drain-Source Breakdown Voltage | 650 V |
Minimum Operating Temperature | - 55 C |
Vgs th - Gate-Source Threshold Voltage | 3.75 V |