STU6N62K3

MOSFET N-Ch, 620V-1.1ohms 5.5A

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MOSFETs N-Ch, 620V-1.1ohms 5.5A
Lead Time: 91 Days

Products specifications

Vds - Drain-Source Breakdown Voltage	620 V
Transistor Polarity	N-Channel
Id - Continuous Drain Current	5.5 A
Configuration	Single
Channel Mode	Enhancement
Qg - Gate Charge	34 nC
Number of Channels	1 Channel
Tradename	SuperMESH
Technology	Si
Maximum Operating Temperature	+ 150 C
Packaging	Tube
Minimum Operating Temperature	- 55 C
Vgs - Gate-Source Voltage	30 V
Mounting Style	Through Hole
Rds On - Drain-Source Resistance	1.28 Ohms
Pd - Power Dissipation	90 W

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Products specifications

Vds - Drain-Source Breakdown Voltage	620 V
Transistor Polarity	N-Channel
Id - Continuous Drain Current	5.5 A
Configuration	Single
Channel Mode	Enhancement
Qg - Gate Charge	34 nC
Number of Channels	1 Channel
Tradename	SuperMESH
Technology	Si
Maximum Operating Temperature	+ 150 C
Packaging	Tube
Minimum Operating Temperature	- 55 C
Vgs - Gate-Source Voltage	30 V
Mounting Style	Through Hole
Rds On - Drain-Source Resistance	1.28 Ohms
Pd - Power Dissipation	90 W